What is phase change memory used for?
What is phase change memory used for?
Phase Change Memory offers the promise of fast RAM speeds, but can be used to store data with low power requirements. Phase Change Memory is a technology that has been in various stages of research and development since the late 1960’s, though mainstream commercial implementation in storage has been limited.
How PCM memory works?
In PCM, data is stored by using the electrical resistance contrast between a high-conductive crystalline phase and a low-conductive amorphous phase of the phase-change material. The phase-change material can be switched from low to high conductive state, and vice-versa, through applying electrical current pulses.
Is Intel Optane phase change memory?
Intel’s Optane/3D XPoint is a type of phase change memory (PCM). A joint report from Objective Analysis and Coughlin Associates projects the market for persistent memory will exceed $36 billion by 2030, with PCM and magnetoresistive RAM (MRAM) leading the way.
What is PCB and PCM?
Hello Dear,PCB means (physics, chemistry, biology non-math) and PCM (physics, chemistry, Mathematic ,non-biology).
What is the difference between FRAM and EEPROM?
Compared to existing EEPROM technologies, FRAM is more resistant to data corruption via electric fields and radiation. The extremely fast write times and the small 130 nanometer (nm) process node make it difficult for attackers to physically or electronically detect and monitor the internal data on the device.
Which is part of a phase change memory device?
Phase-change memory (PCM) is a key enabling technology for non-volatile electrical data storage at the nanometer scale. A PCM device consists of a small active volume of phase-change material sandwiched between two electrodes.
How is phase change used in a PCM cell?
A typical PCM cell is designed such that the volume of phase-change material that must be melted and quenched to the amorphous state to completely block the current path through the device is minimized. This way, the current needed to WRITE the device is minimized, making the memory cell more efficient.
When did Charles Sie invent phase change memory?
In 1969, Charles Sie published a dissertation, at Iowa State University that both described and demonstrated the feasibility of a phase-change-memory device by integrating chalcogenide film with a diode array.
How are phase changes achieved in a laser pulse?
Another group has developed the use of a GeTe–Sb 2Te 3 superlattice to achieve non-thermal phase changes by simply changing the co-ordination state of the Germanium atoms with a laser pulse. This new Interfacial Phase-Change Memory (IPCM) has had many successes and continues to be the site of much active research.